Wide-Bandgap (WBG) semiconductors have become a crucial component in the future development of many major industries, with silicon carbide (SiC) and gallium nitride (GaN) being the most critical power components. The analysis report describes the differences between WBG power semiconductor GaN or SiC devices and silicon-based power semiconductor devices, as well as the role that GaN and SiC power components will play in the future. GaN and SiC power components of WBG semiconductors are the main objects of analysis within the report.

The report examines patent application trends, top 10 applicants, top 10 regions, life-cycle analysis, technology classification analysis, competitiveness of private R&D, interpretations of core patents, interpretations of country-specific industry applications, and analysis of industry applications of major patent owners, etc. By analyzing and cross-referencing the aforementioned aspects, a current overview of the industry technology is created within the report.

The world’s most highly developed industry of semiconductor manufacturing is in Taiwan, and our wealth of experience in the field can furnish greater opportunities for Taiwan to develop industrial applications and manufacturing of WBG semiconductor GaN or SiC power components in the future – which will serve to bolster Taiwan’s ICT and energy tech development.

Through the report, TIPO provides future development suggestions, as well as an overview of the technology landscape, to domestic industries. TIPO hopes that it will facilitate their understanding of the overall development trends in the technology and help them secure a place in the future blue ocean market of WBG semiconductor power components.

• Publish Date : 2022-09-20
• Update : 2022-09-20
• Organization : International Legal Affairs Office
• Visitors : 181